JPS5753985B2 - - Google Patents
Info
- Publication number
- JPS5753985B2 JPS5753985B2 JP50071773A JP7177375A JPS5753985B2 JP S5753985 B2 JPS5753985 B2 JP S5753985B2 JP 50071773 A JP50071773 A JP 50071773A JP 7177375 A JP7177375 A JP 7177375A JP S5753985 B2 JPS5753985 B2 JP S5753985B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50071773A JPS51147982A (en) | 1975-06-13 | 1975-06-13 | Integrated circuit |
US06/689,491 US4951111A (en) | 1975-06-13 | 1985-01-03 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50071773A JPS51147982A (en) | 1975-06-13 | 1975-06-13 | Integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51147982A JPS51147982A (en) | 1976-12-18 |
JPS5753985B2 true JPS5753985B2 (en]) | 1982-11-16 |
Family
ID=13470197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50071773A Granted JPS51147982A (en) | 1975-06-13 | 1975-06-13 | Integrated circuit |
Country Status (2)
Country | Link |
---|---|
US (1) | US4951111A (en]) |
JP (1) | JPS51147982A (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS638175U (en]) * | 1986-07-03 | 1988-01-20 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55120148A (en) * | 1979-03-09 | 1980-09-16 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
US4319396A (en) * | 1979-12-28 | 1982-03-16 | Bell Telephone Laboratories, Incorporated | Method for fabricating IGFET integrated circuits |
US5165086A (en) * | 1985-02-20 | 1992-11-17 | Hitachi, Ltd. | Microprocessor chip using two-level metal lines technology |
US5140387A (en) * | 1985-11-08 | 1992-08-18 | Lockheed Missiles & Space Company, Inc. | Semiconductor device in which gate region is precisely aligned with source and drain regions |
US5172210A (en) * | 1987-03-18 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | Master slice integrated circuit having a memory region |
US5301349A (en) * | 1988-12-28 | 1994-04-05 | Kabushiki Kaisha Toshiba | Single chip computer having ground wire formed immediately parallel a data bus and drivers formed directly under the data bus for high speed data transfer |
JPH0329342A (ja) * | 1989-06-26 | 1991-02-07 | Toshiba Corp | 半導体装置 |
JPH04352467A (ja) * | 1991-05-30 | 1992-12-07 | Toshiba Corp | Mos型半導体集積回路装置 |
US5182629A (en) * | 1991-10-24 | 1993-01-26 | Unisys Corporation | Integrated circuit die having a power distribution system for at least ten-thousand bipolar logic cells |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3541543A (en) * | 1966-07-25 | 1970-11-17 | Texas Instruments Inc | Binary decoder |
US3475621A (en) * | 1967-03-23 | 1969-10-28 | Ibm | Standardized high-density integrated circuit arrangement and method |
US3891190A (en) * | 1972-07-07 | 1975-06-24 | Intel Corp | Integrated circuit structure and method for making integrated circuit structure |
JPS558817B2 (en]) * | 1972-09-11 | 1980-03-06 | ||
US3821781A (en) * | 1972-11-01 | 1974-06-28 | Ibm | Complementary field effect transistors having p doped silicon gates |
US3987418A (en) * | 1974-10-30 | 1976-10-19 | Motorola, Inc. | Chip topography for MOS integrated circuitry microprocessor chip |
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1975
- 1975-06-13 JP JP50071773A patent/JPS51147982A/ja active Granted
-
1985
- 1985-01-03 US US06/689,491 patent/US4951111A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS638175U (en]) * | 1986-07-03 | 1988-01-20 |
Also Published As
Publication number | Publication date |
---|---|
JPS51147982A (en) | 1976-12-18 |
US4951111A (en) | 1990-08-21 |